MRS Proceedings

Articles

Ultrafast Photostriction in Thin Film Bismuth Ferrite and its Correlation to Electronic Dynamics

2012 MRS Fall Meeting.

Yuelin Lia1 c1, Haidan Wena1, Pice Chena2, Margaret P. Cosgriffa2, Donald Walkoa1, June Hyuk Leea1, Carolina Adamoa3, Richard Schallera4a5, Clare Rowlanda5, Christian Schlepuetza1, Eric Dufresnea1, Qingteng Zhanga2, Carlos Gilesa6, Darrell Schloma3, John Freelanda1 and Paul Evansa2

a1 X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

a2 Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

a3 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA

a4 Center for Nanoscale Materials,Argonne National Laboratory, Argonne, Illinois 60439, USA

a5 Department of Chemistry, Northwestern University, Evanston, IL 60208, USA

a6 Universidade Estadual de Campinas, 13083-859 Campinas, SP, Brazil

ABSTRACT

A series of laser pump, x-ray probe experiments show that above band gap photoexcitation can generate a large out-of-plane strain in multiferroic BiFeO3 thin films. The strain decays in a time scale that is the same as the photo-induced carriers measured in an optical transient absorption spectroscopy experiment. We attribute the strain to the piezoelectric effect due to screening of the depolarization field by laser induced carriers. A strong film thickness dependence of strain and carrier relaxation is also observed, revealing the role of the carrier transport in determining the structural and carrier dynamics in complex oxide thin films.

Key Words:

  • photovoltaic;
  • x-ray diffraction (XRD);
  • ferroelectric

Correspondence

c1 ylli@aps.anl.gov

0Comments