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Mechanism of Twin Formation in Excimer-laser-induced Lateral Solidification of Si Films

Published online by Cambridge University Press:  15 June 2012

G.S. Ganot ,
P.C. van der Wilt ,
H.K. Effron ,
B.A. Turk ,
U.J. Chung ,
A.M. Chitu ,
A.B. Limanov  and
James S. Im
G.S. Ganot
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
P.C. van der Wilt
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
H.K. Effron
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
B.A. Turk
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
U.J. Chung
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A.M. Chitu
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A.B. Limanov
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
James S. Im
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA Department of Materials Science and Engineering, College of Engineering, Korea Advanced Institute of Science and Technology, Korea
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Abstract

In this paper, we present experimental findings pertaining to the formation of twins in isolated single-crystal islands obtained via the dot-SLS method. Systematic characterization of the islands using EBSD reveals that Σ = 3 CSL twins constitute the predominant extended defect. Given this, the surface orientation of the seed and twinned regions are shown to be related by a 180° rotation about a <111> axis, and the orientation of the twinned area is apparently manifested in the inverse pole figure as a reflection across the {112} zone. By considering (1) the overall pattern of the twin boundaries within the islands, (2) that solidification proceeds via a facetted mode of growth and, (3) that intragrain-defect-free regions were obtained when the dot-SLS process was performed on a {100} surface-oriented seed, we suggest that these twins are most likely generated heterogeneously at the Si/SiO2interface during the ledge nucleation stage of rapid lateral solidification of the films.

Keywords

crystal growthlaserSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 389 - 394
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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