Laser and Particle Beams

Table of Contents - June 2012 - Volume 30, Issue 02  

Research Article

Charge effect in secondary electron emission from silicon surface induced by slow neon ions

Zhongfeng Xua1a2a3 c1, Lixia Zenga1a2a4, Yongtao Zhaoa1a3, Jianguo Wanga1a2, Yuyu Wanga3, Xiaoan Zhanga3a4, Guoqing Xiaoa1a3 and Fuli Lia1a2

a1 HCI Joint Center of Xi'an Jiaotong University and Institute of Modern Physics, China

a2 Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China

a3 Institute of Modern Physics, Chinese Academy of Science, Lanzhou, China

a4 School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang, China

Abstract

Total electron emission yield for impact of slow Neq+(q = 2, 4, 6, 8) ions with various kinetic energy under normal incidence on n-type Si has been measured. It is shown that for the same charge state, the total electron yield γ increases linearly as the kinetic energy of projectile at impact increases, up to velocities corresponding to the “classical” threshold. Separation of kinetic electron yield γKE and potential electron yield γPE shows that γPE is proportional to the ion charge state and γKE increases linearly with projectile velocity. Finally, based on “single hole without hopping” hypothesis, the expression of the “CRF” F(q) is given, and the relation between γKE and q is obtained successfully for the first time, which is also a basis for judging whether the “trampoline effect” exists.

(Received October 26 2011)

(Accepted October 28 2011)

Keywords

  • Charge restrain factor;
  • Electron emission yield;
  • Highly charged ions (HCI);
  • Threshold velocity

Correspondence:

c1 Address correspondence and reprint requests to: Zhongfeng Xu, Department of Applied Physics, Xi'an Jiaotong University, Xi'an, China. E-mail: zhfxu@mail.xjtu.edu.cn

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