International Journal of Microwave and Wireless Technologies

Table of Contents - June 2012 - Volume 4, Special Issue 03 (European Microwave Week 2011)  

Research Papers

New pulsed measurement setup for GaN and GaAs FETs characterization

Alberto Santarellia1 c1, Rafael Cignania1, Daniel Niessena1, Pier Andrea Traversoa1 and Fabio Filicoria1

a1 DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039

Abstract

A new setup is proposed for the measurement of current–voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate current paths, setting of average voltage values independently of pulse amplitudes and duty cycle, and stability of the setup guaranteed by wide-band dissipative terminations. The system is used for the characterization of dispersive effects due to carrier energy traps and thermal phenomena in GaAs and GaN on SiC field effect transistors. The basic differences between the two technologies are highlighted in the paper.

(Received October 28 2011)

(Revised March 19 2012)

(Online publication April 19 2012)

Keywords

  • Simulation and characterizations of devices and circuits;
  • Modeling;
  • Microwave measurements

Correspondence:

c1 Corresponding author: A. Santarelli Email: alberto.santarelli@unibo.it