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Ga-vacancy activation under low energy electron irradiation in GaN-based materials

Published online by Cambridge University Press:  13 April 2012

Henri Nykänen ,
Sami Suihkonen ,
Lucasz Kilanski ,
Markku Sopanen  and
Filip Tuomisto
Henri Nykänen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Sami Suihkonen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Lucasz Kilanski
Affiliation:
Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/65, 02-668 Warsaw, Poland
Markku Sopanen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Filip Tuomisto
Affiliation:
Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland
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Abstract

We present results on optical degradation of gallium nitride based materials under low energy electron beam irradiation (LEEBI). GaN thin film and GaN/InGaN quantum well samples, grown by metal-organic vapor phase epitaxy (MOVPE), were exposed to a tightly focused (ø = 2 nm, J = 0-130 kA/cm2), rapidly scanning electron beam (e-beam) with energy of 5-20 keV and dose of 0-500 μC/cm2. The irradiation severely reduced the band-to-band photoluminescence of the exposed sample areas. Performing positron annihilation spectroscopy measurements on the irradiated films revealed an important increase of Ga-vacancy concentration as a function of the irradiation dose. Based on the measurements we propose that in-grown passive VGa-Hn complexes are present in MOVPE grown GaN (and its alloys), and are activated by LEEBI.

Keywords

electron irradiationIII-Vscanning electron microscopy (SEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g05-05-ii06-05
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Look, D. C., Reynolds, D. C., Hemsky, J. W., Sizelove, J. R., Jones, R. L. and Molnar, R. J. Phys. Rev. Lett. 79, 2273 (1997).Google Scholar
2. Tuomisto, F., Ranki, V., Look, D. and Farlow, G., Phys Rev. B 76, 165207 (2007).Google Scholar
3. Dassonneville, S., Amokrane, A., Sieber, B., Farvacque, J.-L., Beaumont, B., Gibart, P., Ganiere, J.-D. and Leifer, K., J. Appl. Phys. 89, 7966 (2001).Google Scholar
4. Li, X., Gu, S. Q., Reuter, E. E., Verdeyen, J. T., Bishop, S. G. and coleman, J. J., J. Appl. Phys. 80, 2687 (1996).Google Scholar
5. Nykänen, H., Mattila, P., Suihkonen, S., Riikonen, J., Quillet, E., Homeyer, E., Bellessa, J. and Sopanen, M., J. Appl. Phys. 109, 083105 (2011).Google Scholar
6. Gelhausen, O., Klein, H. N., Phillips, M. R. and Goldys, E. M., Appl.Phys.Lett. 81, 3747 (2002).Google Scholar
7. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986)Google Scholar
8. Tuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B. and Kersting, R., Appl. Phys. Lett. 90, 121915 (2007)Google Scholar
9. Bethe, H. and Ashkin, J., Experimental Nuclear Physics, by Serge, E. (Wiley, New York 1953)Google Scholar
10. Nykänen, H., Mattila, P., Suihkonen, S., Riikonen, J. and Sopanen, M., “Low energy electron beam induced damage on gallium nitride based materials”, Phys. Stat. Sol. (c), to be publishedGoogle Scholar
11. Look, D. C., Farlow, G. C., Drevinsky, P. J., Bliss, D. F. and Sizelove, J. R., Appl. Phys. Lett. 83, 3525 (2003)Google Scholar
12. Gelhausen, O., Klein, H. N., Phillips, M. R. and Goldys, E. M., Appl. Phys. Lett. 83, 3293 (2003)Google Scholar
13. Everhart, T. and Hoff, P. H., J. Appl. Phys. 42, 5837 (1971)Google Scholar
14. Hautakangas, S., Makkonen, I., Ranki, V., Puska, M. J., Saarinen, K., Xu, X. and Look, D. C., Phys. Rev. B 73, 193391 (2006)Google Scholar
15. Wright, A. F., J. Appl. Phys. 90, 1164 (2001)Google Scholar
16. Nykänen, H., Suihkonen, S., Kilanski, L., Sopanen, M. and Tuomisto, F., Appl. Phys. Lett. 100, 12 (2012).Google Scholar