MRS Bulletin

Resistive switching phenomena in thin films: Materials, devices, and applications

Resistive switching phenomena in thin films: Materials, devices, and applications

Organic resistive nonvolatile memory materials

Takhee Leea1 and Yong Chena2

a1 Department of Physics and Astronomy, Seoul National University, Korea; tlee@snu.ac.kr

a2 University of California, Los Angeles, USA; yongchen@seas.ucla.edu

Abstract

Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.

Key Words:

  • Memory;
  • organic;
  • film;
  • devices;
  • electrical properties
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