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Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics

C.D. Cressa1 c1, J.J. McMorrowa2, J.T. Robinsona3, A.L. Friedmana4, H.L. Hughesa5, B.D. Weavera5 and B.J. Landia6

a1 Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA

a2 Global Strategies Group (North America) Inc., Crofton, Maryland 21114, USA

a3 Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA

a4 Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA

a5 Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, District of Columbia 20375, USA

a6 Department of Chemical and Biomedical Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA

Abstract

We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, for total ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiations with ±1 MV/cm across the gate dielectric have little effect on the threshold voltage, yielding shifts of less than ±0.25 V and no detrimental effect on SWCNT mobility or maximum drain current. This illustrates the need to consider the total device material composition when investigating the radiation response of carbon nanoelectronics and substantiates the applicability of SWCNT-based nanoelectronics for use in high TID environments.

(Received June 22 2011)

(Accepted August 12 2011)

Correspondence:

c1 Address all correspondence to C.D. Cress at carbon.nanoelectronics@nrl.navy.mil

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