MRS Communications

Table of Contents - November 2011 - Volume  1   

Rapid Communications

Low-voltage organic transistor with subfemtoliter inkjet source–drain contacts

Tomoyuki Yokotaa1, Tsuyoshi Sekitania1, Yu Katoa1, Kazunori Kuribaraa1, Ute Zschieschanga2, Hagen Klauka2, Tatsuya Yamamotoa3, Kazuo Takimiyaa3, Hirokazu Kuwabaraa4, Masaaki Ikedaa4 and Takao Someyaa5 c1

a1 Department of Electrical Engineering and Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

a2 Max Planck Institute for Solid State Research, D-70569 Stuttgart, Germany

a3 Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8527, Japan

a4 Nippon Kayaku Co., Ltd., Kita-ku, Tokyo 123-0865, Japan

a5 Department of Electrical Engineering and Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan; Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan

Abstract

We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel length of 1 µm were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a single-molecule self-assembled monolayer-based gate dielectric. On reducing the droplet volume (0.5 fl) ejected from the inkjet nozzle, which reduces sintering temperatures down to 90 °C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.

(Received May 06 2011)

(Accepted June 02 2011)

Correspondence:

c1 Address all correspondence to Takao Someya at someya@ee.t.u-tokyo.ac.jp

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