a1 Department of Electrical Engineering and Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
a2 Max Planck Institute for Solid State Research, D-70569 Stuttgart, Germany
a3 Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8527, Japan
a4 Nippon Kayaku Co., Ltd., Kita-ku, Tokyo 123-0865, Japan
a5 Department of Electrical Engineering and Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan; Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan
We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel length of 1 µm were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a single-molecule self-assembled monolayer-based gate dielectric. On reducing the droplet volume (0.5 fl) ejected from the inkjet nozzle, which reduces sintering temperatures down to 90 °C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.
(Received May 06 2011)
(Accepted June 02 2011)