Editors : E. Fortunato
a1 Advanced Technology Institute, University of Surrey, Guildford, GU2 7HX, UK
a2 Merck Chemicals, Chilworth Technical Centre, Southampton, SO16 7QD, UK
Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~103 and hole mobilities of ~13 cm2/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be used in large area inexpensive electronics.
(Online publication September 22 2011)