MRS Proceedings


Proton formation and diffusion in amorphous SiNx:H

2011 MRS Spring Meeting.

H.F.W. Dekkersa1, V. Prajapatia2, S. Van Elshochta1 and E. Vancoillea1

a1 FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium

a2 SSET, imec, Kapeldreef 75, 3001 Leuven, Belgium.


In this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.

(Online publication August 11 2011)

Key Words:

  • nitride;
  • hydrogenation;
  • H
Related Content