Editors : V. Peterson
a1 FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
a2 SSET, imec, Kapeldreef 75, 3001 Leuven, Belgium.
In this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.
(Online publication August 11 2011)