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Specific contact resistance of ohmic contacts to n-type SiC membranes

Published online by Cambridge University Press:  27 July 2011

N.F. Mohd Nasir ,
A.S. Holland ,
G.K. Reeves ,
P.W. Leech ,
A. Collins  and
P. Tanner
N.F. Mohd Nasir
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
A.S. Holland
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
G.K. Reeves
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
P.W. Leech
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
A. Collins
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
P. Tanner
Affiliation:
Griffith University, Queensland Microtechnology Facility, Brisbane, Australia
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Abstract

Membranes of epitaxial SiC have been used as a means of eliminating the leakage current into the Si substrate during circular transmission line model (CTLM) measurements. In the n+-3C-SiC/Si wafers, the Si substrate was etched in a patterned window with dimensions up to 10 mm × 15 mm2. An array of CTLM metal contacts was then deposited onto the upper surface of the n+-SiC membrane. The CTLM contacts on the membrane have shown an ohmic current/voltage response while electrodes located on the adjacent substrate were non-ohmic. Values of ρc were measured directly on the membranes. These results have shown a significant increase in the current flow below the metal contacts due to the presence of the Si substrate.

Keywords

thin filmmicroelectro-mechanical (MEMS)ceramic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1335: Symposium O – Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics , 2011 , mrss11-1335-o09-01
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Cimalla, V., Pezoldt, J., Ambacher, O., J. Phys.D Applied Phys. 40, 6386 (2007).Google Scholar
2. Zappe, S.F., Design, “Performance and Applications of SiC MEMs”, in SiC Electromechanical Systems for Harsh Environments, Imperial College Press, Ed. Cheung, R. (2006).Google Scholar
3. Zorman, C.A., Proc. DTIP of MEMs and MOEMs, Rome, (April 2009).Google Scholar
4. Noh, J.I., Nahm, K.S. Kim, K.C. and Capano, M.A., Solid-State Electronics 46, 2273 (2002).Google Scholar
5. Lu, W., Collins, W.E. and Mitchel, W.C. in SiC Power Materials, Springer, Ed. Chen, Z.C.,(2004).Google Scholar
6. Basak, D., Mahanty, S., Materials Science and Engineering B98, 177 (2003).Google Scholar
7. Reeves, G.K., Solid State Electronics 23, 487 (1980).Google Scholar
8. Wang, L., Dimitrijev, S., Han, J., Iocopi, F. and Zhou, J., Journal of Crystal Growth 311, 4462 (2009).Google Scholar
9. Barda, B., Machac, P., Hubickova, M. and Nahlik, J., J. Mat. Sci:Mater. Electron. 19, 1039 (2008).Google Scholar
10. Kassamakova, L., Kakanakov, R.D., Kassamakov, I.V., Nordell, N., Savage, S., Hjőrvarson, B., Svedberg, E.B., Abom, L. and Madsen, L.D., IEEE Trans. Electron. Devices 46, 605 (1999).Google Scholar
11. Pai, C.S., Hanson, C.M., Lau, S.S., J. Appl. Phys. 57 618 (1985).Google Scholar