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Excimer-Laser-Induced Melting and Solidification of PECVD a-Si films under Partial-Melting Conditions

Published online by Cambridge University Press:  27 June 2011

Q. Hu ,
Catherine S. Lee ,
T. Li ,
Y. Deng ,
U.J. Chung ,
A. B. Limanov ,
A. M. Chitu ,
M.O. Thompson  and
James S. Im
Q. Hu
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
Catherine S. Lee
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA Department of Materials Science and Engineering, College of Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea
T. Li
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
Y. Deng
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
U.J. Chung
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A. B. Limanov
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A. M. Chitu
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
M.O. Thompson
Affiliation:
Department of Materials Science and Engineering, College of Engineering, Cornell University, Ithaca, NY, USA
James S. Im
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA Department of Materials Science and Engineering, College of Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea
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Abstract

This paper reports on new experimental findings and conclusions regarding the pulsed-laser-induced melting-and-solidification behavior of PECVD a-Si films. The experimental findings reveal that, within the partial-melting regime, these a-Si films can melt and solidify in ways that are distinct from, and more complex than, those encountered in microcrystalline-cluster-rich LPCVD a-Si films. Specifically (1) spatially dispersed and temporally stochastic nucleation of crystalline solids occurring relatively effectively at the moving liquid-amorphous interface, (2) very defective crystal growth that leads to the formation of fine-grained Si proceeding, at least initially after the nucleation, at a sufficiently rapidly moving crystal solidification front, and (3) the propensity for local preferential remelting of the defective regions and grain boundaries (while the beam is still on) are identified as being some of the fundamental factors that can participate and affect how these PECVD films melt and solidify.

Keywords

crystallinelaser annealingamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-10
Copyright
Copyright © Materials Research Society 2011

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References

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