MRS Proceedings


Memristive Switches with Two Switching Polarities in a Forming Free Device Structure

2011 MRS Spring Meeting.

Rainer Bruchhausa1, Christoph R. Hermesa1 and Rainer Wasera1a2

a1 Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany and JARA – Fundamentals for Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany

a2 Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen, 52074 Aachen, Germany


In this study an electroforming free device structure based on 25nm thin TiO2 thin films is presented. The TiO2 films are deposited on CMOS compatible W plugs. The use of 5nm thick interlayers of Ti and W between the TiO2 and the Pt electrode turn out to be the key step to achieve the forming free performance. In these Pt/Ti/TiO2/W or Pt/W/TiO2/W samples the switching polarity can be repeatedly changed from “eightwise” to “counter-eightwise” in one device by a proper adjustment of the I-V measurement conditions. The most simple explanation for this observation is that the switching interface can be flipped back and forth from the bottom to the top electrode.

Key Words:

  • memory;
  • oxide;
  • sputtering