MRS Proceedings


Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

2010 MRS Fall Meeting.

Shinichi Tanabea1, Yoshiaki Sekinea1, Hiroyuki Kageshimaa1, Masao Nagasea1 p1 and Hiroki Hibinoa1

a1 NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan


We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

(Online publication March 31 2011)

Key Words:

  • Hall effect;
  • electronic material;
  • electrical properties


p1 Present address: The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan