Editors : M. Chhowalla, R.R. Keller, M. Meyyappan, W.J. Ready
a1 NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.
(Online publication March 31 2011)
p1 Present address: The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan