MRS Proceedings


Creating Novel Transport Properties in Electric Double Layer Field Effect Transistors Based on Layered Materials

2010 MRS Fall Meeting.

J. T. Yea1, M. F. Craciuna2, M. Koshinoa3, S. Russoa2, Y. Kasaharaa1, H. T. Yuana1, H. Shimotania1, A. F. Morpurgoa4 and Y. Iwasaa1

a1 Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

a2 Center for Graphene Science, University of Exeter, EX4 4QL Exeter, United Kingdom

a3 Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8551, Japan

a4 DPMC and GAP, Université de Genéve, 24 quai Ernest Ansermet, CH1211 Geneva, Switzerland


We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n~1014 cm-2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×1014 cm-2 in graphene and its multi-layers.

(Online publication March 28 2011)

Key Words:

  • layered;
  • ionic conductor;
  • electrical properties