Editors : P. Andrew
a1 Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
a2 Center for Graphene Science, University of Exeter, EX4 4QL Exeter, United Kingdom
a3 Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8551, Japan
a4 DPMC and GAP, Université de Genéve, 24 quai Ernest Ansermet, CH1211 Geneva, Switzerland
We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n~1014 cm-2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×1014 cm-2 in graphene and its multi-layers.
(Online publication March 28 2011)