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A CMOS Compatible Carbon Nanotube Growth Approach

Published online by Cambridge University Press:  23 March 2011

Daire Cott
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium
Masahito Sugiura
Affiliation:
Tokyo Electron Ltd., Technology Development Center, 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan
Nicolo Chiodarelli
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium;
Kai Arstila
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium
Philipe M. Vereecken
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium Center for Surface Chemistry and Catalysis, Katholieke Universiteit Leuven, Leuven, Belgium;
Bart Vereecke
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium
Sven Van Elshocht
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium
Stefan De Gendt
Affiliation:
IMEC, 75 Kapeldreef, Leuven, Belgium Department.of Chemistry, Katholieke Universiteit Leuven, Leuven, Belgium.
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Abstract

In future technology nodes, 22nm and below, carbon nanotubes (CNTs) may provide a viable alternative to Cu as an interconnect material. CNTs exhibit a current carrying capacity (up to 109 A/cm2), whilst also providing a significantly higher thermal conductivity (SWCNT ~ 5000 WmK) over Copper (106 A/cm2 and ~400WmK). However, exploiting such properties of CNTs in small vias is a challenging endeavor. In reality, to outperform Cu in terms of a reduction in via resistance alone, densities in the order of 1013 CNTs/cm2 are required. At present, conventional thermal CVD of carbon nanotubes is carried out at temperatures far in excess of CMOS temperature limits (400 C). Furthermore, high density CNT bundles are most commonly grown on insulating supports such as Al2O3 and SiO2 as they can effectively stabilize metallic nanoparticles at elevated temperatures but this limits their application in electronic devices. To circumvent these obstacles we employ a remote microwave plasma to grow high density CNTs at a temperature of 400 C on conductive underlayers such as TiN. We identify some critical factors important for high-quality CNTs at low temperatures such as control over the catalyst to underlayer interaction and plasma growth environment while presenting a fully CMOS compatible carbon nanotube synthesis approach

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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