Editors : M. Chhowalla, R.R. Keller, M. Meyyappan, W.J. Ready
a1 Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
a2 Materials Science, Massachusetts Institute of Technology, Cambridge, MA, United States.
This paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.
(Online publication March 21 2011)