CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

MRS Proceedings

MRS Proceedings / Volume 1283 / 2011
Copyright © Materials Research Society 2011
DOI: http://dx.doi.org/10.1557/opl.2011.583 (About DOI)

Table of Contents - Volume 1283 - Symposium B – Carbon-Based Electronic Devices—Processing, Performance and Reliability

Editors : M. Chhowalla, R.R. Keller, M. Meyyappan, W.J. Ready

Articles

CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2010 MRS Fall Meeting.

Article author query
giacchetti bm [Google Scholar]
hsu a [Google Scholar]
wang h [Google Scholar]
kim kk [Google Scholar]
kong j [Google Scholar]
palacios t [Google Scholar]

Benjamin Mailly Giacchetti^a1^a2, Allen Hsu^a1, Han Wang^a1, Ki Kang Kim^a1, Jing Kong^a1 and Tomas Palacios^a1

^a1Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.

^a2Materials Science, Massachusetts Institute of Technology, Cambridge, MA, United States.

ABSTRACT

This paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

(Online publication March 21 2011)

Key Words:

chemical vapor deposition (CVD) (chemical reaction);
sensor;
electrical properties

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MRS Proceedings

Articles

CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2010 MRS Fall Meeting.

Benjamin Mailly Giacchettia1a2, Allen Hsua1, Han Wanga1, Ki Kang Kima1, Jing Konga1 and Tomas Palaciosa1

Benjamin Mailly Giacchetti^a1^a2, Allen Hsu^a1, Han Wang^a1, Ki Kang Kim^a1, Jing Kong^a1 and Tomas Palacios^a1