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Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

Published online by Cambridge University Press:  03 September 2012

R. A. Fischer ,
A. Wohlfart ,
A. Devi  and
W. Rogge
R. A. Fischer
Affiliation:
Anorganische Chemie II, Ruhr Universtität Bochum, D-44801, Germany
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Abstract

We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the αGaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.18
Copyright
Copyright © Materials Research Society 1999

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