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Electrical Characteristics of the Pt/SBT/TiO2/Si MFIS Structures with Thickness Variation of the SBT Film

Published online by Cambridge University Press:  21 March 2011

Ji-Woong Kim ,
Kwang-Yong Lee ,
Jae-Hoon Choi  and
Tae-Sung Oh
Ji-Woong Kim
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Kwang-Yong Lee
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Jae-Hoon Choi
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Tae-Sung Oh
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
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Abstract

Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structures were prepared with variation of the Sr0.85Bi2.4Ta2O9 (SBT) film thickness for MFIS-FET applications. After depositing TiO2 film of 10 nm thickness by reactive sputtering on Si(100) substrate as a buffer layer, SBT thin film of 210-400 nm thickness was prepared onto it by metal organic decomposition process. Regardless of the SBT film thickness, the Pt/SBT/TiO2/Si structures exhibited clockwise directional hysteresis, indicating well-defined ferroelectric switching behavior of the SBT films. While the memory window of the Pt/SBT/TiO2/Si MFIS structures increased with increasing the SBT film thickness, the maximum capacitance of the Pt/SBT/TiO2/Si MFIS structures decreased with increasing the SBT film thickness. The Pt/SBT(400 nm)/TiO2(10 nm)/Si structure exhibited a memory window of 1.3 V at ±5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.1
Copyright
Copyright © Materials Research Society 2001

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References

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