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Growth and Characterization Studies of ABi2ta2o9 (A = Ba, Sr and Ca) Ferroelectric Thin Films

Published online by Cambridge University Press:  21 March 2011

R. R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
W. Opérez
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
R. J. Rodríguez
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
P. S. Dobal
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
S.B. Krupanidhi
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore- 560012, India
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Abstract

Thin films of ferroelectric ABi2Ta2O9 bismuth-layered structure, where A = Ba, Sr and Ca, were prepared by pulsed laser deposition technique on Pt/TiO2/SiO2/Si(100) substrates. The influence of substrate temperature between 500 to 750°C, and oxygen partial pressure 100-300 mTorr, on the structural and electrical properties of the films was investigated. The films deposited above 650°C substrate temperature showed complete Aurivillius layered structure. Films annealed at 750°C for 1h in oxygen atmosphere have exhibited better electrical properties. Atomic force microscopy study of surface topography shows that the films grown at lower temperature has smaller grains and higher surface roughness. This paper discusses the pronounced influence of A-site cation substitution on the structural and ferroelectric properties with the aid of Raman spectroscopy, X-ray diffraction and electrical properties. The degradation of ferroelectric properties with Ba and Ca substitution at A-sites is attributed to the higher structural distortion caused by changing tolerance factor. A systematic proportionate variation of coercive field is attributed to electronegativity difference of A-site cations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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