MRS Proceedings

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HIGH FREQUENCY TOP-GATED GRAPHENE RF AMBIPOLAR FETs USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

2010 MRS Fall Meeting.

Osama M. Nayfeha1 and Madan Dubeya1

a1 United States Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, MD 20783, USA

ABSTRACT

Ambipolar top-gated field effect transistors (FETs) based on large area Cu catalyzed CVD-grown monolayer graphene interfaced to advanced dielectrics have been constructed and examined both for their material and electrical qualities. Interfacing of the graphene with novel insulators/substrates could be tailored for the particular application and provide for enhanced device functionality. In contrast to graphene FETs using SiO2-based top-gate dielectric, which show asymmetric electron/hole mobility (with larger hole mobility), and Dirac point shifted to positive levels, FETs constructed using advanced AlN show Dirac point almost near neutral levels and near symmetric electron/hole mobility. The DP is shifted likely due to compensation of the intrinsic p-type doping by n-type doping introduced by the AlN deposition and potentially via a contribution of polarization-induced carrier density. Finally, we demonstrate a top-gated graphene FET with the first observation of RF operation with GHz cut-off frequency based on large area CVD graphene.

(Online publication March 17 2011)

Key Words:

  • C;
  • semiconducting;
  • electronic material
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