Editors : M. Chhowalla, R.R. Keller, M. Meyyappan, W.J. Ready
a1 Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA 92697, U.S.A. email@example.com
In this work, we present progress towards devices fabrication using all semiconducting nanotubes as the starting material. Individual nanotubes are known to have intrinsic mobility of more than 10,000 cm2/V-s but using a network of nanotubes will decrease this mobility because of tube-tube screening effect and junction resistance. Here we are using solution-based deposition of purified 99% semiconducting single-walled nanotubes as the channel in field effect transistors. DC analysis of devices’ characterization shows a high mobility, more than 50 cm2/Vs, and good on/off ratio in the range of more than 103 and 104. A critical issue is the ink formulation and dependence of electronic properties on the nanotube density after deposition. In addition, the channel length also plays an important role in controlling both mobility and on/off ratio.
(Online publication March 17 2011)