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Improved High Resolution Post-Transit Spectroscopy for Determining the Density of States in Amorphous Semiconductors

Published online by Cambridge University Press:  17 March 2011

Charlie Main ,
Steve Reynolds ,
Rashad I. Badran  and
Joe M. Marshall
Charlie Main
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee DD1 1HG, UK
Steve Reynolds
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee DD1 1HG, UK
Rashad I. Badran
Affiliation:
Department of Physics, The Hashemite University, Zarqa, Jordan
Joe M. Marshall
Affiliation:
Dept of Materials Engineering, University of Wales Swansea, UK
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Abstract

We show that the analysis of post-transit photocurrent i(t) in a multi-trapping context to determine the density of trapping states g(E) is capable of resolving features less than kT in width. A commonly used method uses a Laplace inversion of i(t) data giving the well-known result g(E) ∼ t i(t) but employs a delta function approximation for trap release times, which results in loss of energy resolution. We show that it is possible to retain the exponential distribution function for trap release time and solve the multi-trapping rate equations directly, giving significantly improved resolution. The analysis is performed on computer generated post-transit data for distributed and discrete traps, and compared with the earlier method and other related Fourier transform methods for determining g(E). In addition, the versatility of the new method in handling cases with either distributed traps or with discrete traps means that it can be applied to disordered materials or to crystalline materials with well-defined defect levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A27.6
Copyright
Copyright © Materials Research Society 2000

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References

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