MRS Proceedings

Table of Contents - Volume  820  - Symposia O/R – Nanoengineered Assemblies and Advanced Micro/Nanosystems  

Editors : J.T. Borenstein, P. Grodzinski, L.P. Lee, J. Liu, D. McIlroy, L. Merhari, J.B. Pendry, Z. Wang


Polariton-enhanced near field lithography and imaging with infrared light

2004 MRS Spring Meeting.

Gennady Shvetsa1 and Yaroslav A. Urzhumova1

a1 The University of Texas at Austin, Department of Physics, Austin TX 78712, USA


A novel approach to making a material with negative index of refraction in the infrared frequency band is described. Materials with negative dielectric permittivity ε are utilized in this approach. Those could be either plasmonic (metals) or polaritonic (semiconductors) in nature. A sub-wavelength plasmonic crystal (SPC), with the period much smaller than the wavelength of light, consisting of nearly-touching metallic cylinders is shown to support waves with negative group velocity. The usage of such waves for sub-wavelength resolution imaging is demonstrated in a numerical double-slit experiment. Another application of the negative-epsilon materials is laser-driven near field nanolithography. Any plasmonic or polaritonic material with nega- tive ε = –εd sandwiched between dielectric layers with εd > 0 can be used to significantly decrease the feature size. It is shown that a thin slab of SiC is capable of focusing the mid- IR radiation of a CO2 laser to several hundred nanometers, thus paving the way for a new nano-lithographic technique: Phonon Enhanced Near Field Lithography in Infrared (PENFIL). Although an essentially near-field effect, this resolution enhancement can be quantified using far-field measurements. Numerical simulations supporting such experiments are presented.