Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-23T09:25:04.856Z Has data issue: false hasContentIssue false
  • English
  • Français

Lattice Parameters and Thermal Expansion of Important Semiconductors and Their Substrates

Published online by Cambridge University Press:  15 March 2011

Robert R. Reeber  and
Kai Wang
Robert R. Reeber
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695-7907
Kai Wang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695-7907
Get access

Abstract

Thermal expansion and lattice parameters are useful thermophysical properties of materials. A knowledge of their temperature dependence is essential for optimizing device design and crystal growth conditions while minimizing the residual stress in epitaxial films and electronic devices. Currently first principles theory can predict lattice parameters to 0.01%. Information required for device design and thin film crystal growth requires improvements two to three orders of magnitude better than this. Available experimental results from our work and the literature will be reviewed in terms of a high temperature predictive model. Tables of thermal expansion and lattice parameters for AlN, GaN, 6H-SiC, β-SiC, MgO, Al2O3, ZnO and GaAs are provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.35.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wang, K. and Reeber, R. R., Mater. Sci. Eng. R23, 101 (1998).Google Scholar
2 Reeber, R. R. and Wang, K., Mater. Chem. Phys. 46, 259 (1996).Google Scholar
3 Wang, K. and Reeber, R. R., in Nitride Semiconductors, edited by Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., Strite, S. (Mat. Res. Soc. Symp. Proc. 482, Warrendale, PA, 1998) pp. 863–868.Google Scholar
4 Reeber, R. R., phys. stat. sol. (a) 32, 321 (1975).Google Scholar
5 Reeber, R. R. and Wang, K., J. Mater. Res. 15, 40 (2000).Google Scholar
6 Ashmawi, W., Wang, K., Reeber, R. R., and Zikry, M., Presented at 2000 Spring MRS Meeting(O10.2).Google Scholar
7 Reeber, R. R. and Wang, K., in Covalent Ceramics III--Science and Technology of Non-Oxides, edited by Hepp, A.F., Kumta, P.N., Sullivan, J.J., Fischman, G.S., Kaloyeros, A.E. (Mat. Res. Soc. Symp. Proc. 410, Warrendale, PA, 1996) pp. 211–216.Google Scholar
8 Reeber, R. R. and John, J. Haas, L., in Thermal Expansion 8, edited by Hahn, T. A. (Plenum Press, New York, 1984), p. 31.Google Scholar
9 Wang, K. and Reeber, R. R., in Computer-Aided Design of High Temperature Materials, edited by Pechenik, A., Kalia, R. K., and Vashishta, P. (Oxford University Press, New York, 1999), p. 473.Google Scholar
10 Touloukian, Y. S., Kirby, R. K., Taylor, R. E., and Lee, T. Y. R., Thermal Expansion- Nonmetallic Solids, Vol. 13 (Plenum, New York, 1977).Google Scholar
11 White, G. K. and Roberts, R. B., High Temp.-High Pressures 15, 321 (1983).Google Scholar
12 Aldebert, P. and Traverse, J.-P., High Temp.-High Pressures 16, 127 (1984).Google Scholar
13 Amatuni, A. N., Malyutina, T. I., Chekhovskoi, V. Y., and Petukhov, V. A., High Temp.- High Pressures 8, 565 (1976).Google Scholar
14 Leszczynski, M., Suski, T., Teisseyre, H., Perlin, P., Grzegory, I., Jun, J., Porowski, S., and Moustakas, T. D., J. Appl. Phys. 76, 4909 (1994).Google Scholar
15 Taylor, A. and Jones, R. M., in Silicon Carbide-A High Temperature Semiconductor, edited by O'Connor, J. R. and Smiltens, J. (Pergamon Press, New York, 1960), p. 147.Google Scholar
16 Li, Z. and Bradt, R. C., J. Am. Ceram. Soc. 69, 863 (1986).Google Scholar
17 Inoue, Z. and Kurachi, Y., in Ceramic Components for Engines, edited by Somiya, S., Kanai, E., and Ando, K.-I. (Elsevier Applied Science, London, 1983), p. 519.Google Scholar
18 Reeber, R. R., Wang, K., Toby, B., and Huang, Q., in preparation (2000).Google Scholar
19 Taylor, D., British Ceram. Trans. J. 83, 5 (1984).Google Scholar
20 Albertsson, J. and Abrahams, S. C., Acta Cryst. B45, 34 (1989).Google Scholar
21 Novikova, S. I., in Physics of III-V Compounds; Vol. 2, edited by Willardson, R. K. and Beer, A. C. (Academic Press, New York, 1996), p. 33.Google Scholar