Hostname: page-component-7c8c6479df-7qhmt Total loading time: 0 Render date: 2024-03-28T11:45:54.824Z Has data issue: false hasContentIssue false

Fabrication of Yy‐Pr1‐y ‐Ba‐Cu‐O Thin Films and Superlattices of ‐Ba‐Cu‐O/Yy‐Pr1‐y ‐Ba‐Cu‐O

Published online by Cambridge University Press:  28 February 2011

X. D. Wu
Affiliation:
Exploratory Research and Development Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
M. S. Hegde
Affiliation:
Indian Institute of Science, Bangalore, India 56102
X. X. Xi
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08854
Q. Li
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08854
A. Inam
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08854
S. A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701
J. A. Martinez
Affiliation:
Departamento de Fisica, Universidad Nacional de La Plata (UNLP), Argentina
B. J. Wilkens
Affiliation:
Bellcore, Red Bank, NJ 07701
J. B. Barner
Affiliation:
Bellcore, Red Bank, NJ 07701
C. C. Chang
Affiliation:
Bellcore, Red Bank, NJ 07701
L. Nazar
Affiliation:
Exploratory Research and Development Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
C. T. Rogers
Affiliation:
Bellcore, Red Bank, NJ 07701
T. Venkatesan
Affiliation:
Bellcore, Red Bank, NJ 07701
Get access

Abstract

We have prepared epitaxial thin films of Yy‐Pr1‐y‐Ba‐Cu‐O (y= 1 to 0) and superlattices of Y‐Ba‐Cu‐O/Yy‐Pr1‐y ‐Ba‐Cu‐O using pulsed laser deposition technique. The zero resistance transition temperatures of Yy‐Pr1‐y‐Ba‐Cu‐O bulk samples are reproduced in the films. The composition oscillations in the superlattices are observed by SIMS. The films and superlattices are found to have c‐axis orientations and good crystallinity.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Venkatesan, T. et al. , Appl. Phys. Lett. 54,581(1989); G. Roas,et. al, ibid., 52, 1557(1988); G. Koren, ibid.,54, 1920(1989); X. X. Xi, et. al. Z. Phys. B74. 13(1989).Google Scholar
2 Soderholm, L. et al. , Nature, 328, 604(1987); J. K. Liang, et. al. Z. Phys. B69, 137(1987); A. Kebede, Phys. Rev. B4Q, 4453(1989).Google Scholar
3 Venkatesan, T., Inam, A., Dutta, B., Ramesh, R., Hegde, M. S., Wu, X. D., Nazar, L., Chang, C. C., Barner, J., Rogers, C. T. and Hwang, D. M. et al. , Appl. Phys. Lett, (to be published).Google Scholar
4 Poppe, P. et al. , Solid State Comm. 71,569(1989).Google Scholar
5 Rogers, C. T. et al. , Appl. Phys. Lett. 55,2032(1989).Google Scholar
6 D. G. Schlom, et al. , Appl. Phys. Lett. 52,1660(1988).Google Scholar
7 Triscone, J.‐M. et al. , Phys. Rev. Lett. 62,1016(1989).Google Scholar
8 Wu, X. D., Xi, X. X., Li, Q., Inam, A., Dutta, B., DiDomenico, L., Weiss, C., Martinez, J. A., Wilkens, B. J., Schwarz, S. A., Barner, J. B., Chang, C. C., Nazar, L. and Venkatesan, T. et al. , Appl. Phys. Lett, (in press).Google Scholar
9 Meyer, K. E. et al. , J. Appl. Phys. 52, 6608(1981).Google Scholar