a1 FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
a2 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.
(Received November 04 1985)
(Accepted November 11 1985)