Journal of Materials Research

Articles

Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

W. Sinkea1, F. W. Sarisa1, J. C. Barboura2 and J. W. Mayera2

a1 FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands

a2 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853

Abstract

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

(Received November 04 1985)

(Accepted November 11 1985)

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