MRS Proceedings

Table of Contents - Volume  378  - Symposium B – Defect and Impurity-Engineered Semiconductors and Devices  

Editors : I. Akasaki, S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori

Articles

Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

1995 MRS Spring Meeting.

Sathya Balasubramaniana1 and Vikram Kumara2

a1 Department of Physics, Indian Institute of Science, Bangalore -560 012,

a2 Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India

Abstract

The effect of hydrogenation on the photoluminescence (PL) of InP : Mg, InP : Zn and undoped n-InP is presented. An increase in the near band edge pl intensity due to passivation of non-radiative centers was observed in all the samples. A donor - acceptor pair transition was observed before hydrogenation in the InP : Mg sample and after hydrogenation in the InP : Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation.

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