MRS Proceedings

Table of Contents - Volume  378  - Symposium B – Defect and Impurity-Engineered Semiconductors and Devices  

Editors : I. Akasaki, S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori


Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

1995 MRS Spring Meeting.

Sathya Balasubramaniana1 and Vikram Kumara2

a1 Department of Physics, Indian Institute of Science, Bangalore -560 012,

a2 Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India


The effect of hydrogenation on the photoluminescence (PL) of InP : Mg, InP : Zn and undoped n-InP is presented. An increase in the near band edge pl intensity due to passivation of non-radiative centers was observed in all the samples. A donor - acceptor pair transition was observed before hydrogenation in the InP : Mg sample and after hydrogenation in the InP : Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation.