Hostname: page-component-7c8c6479df-27gpq Total loading time: 0 Render date: 2024-03-28T15:55:20.241Z Has data issue: false hasContentIssue false

Ca(1−x)NixO catalytic thin films prepared by pulsed laser deposition

Published online by Cambridge University Press:  03 March 2011

X.L. Mao
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
D.L. Perry*
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
R.E. Russo*
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
*
a)Authors to whom correspondence can be addressed.
a)Authors to whom correspondence can be addressed.
Get access

Abstract

Ca(1−x)NixO solid-solution films with varying stoichiometry have been prepared by pulsed laser deposition from sintered targets of NiO and CaO. X-ray diffraction data indicate that the films have the structure of sodium chloride. The lattice constants for different stoichiometries vary with film composition. Using the Madelung energy as the binding energy between anions and cations and assuming that nickel and calcium ions are distributed randomly in lattice sites, the lattice constants were calculated and found to compare with experimental results. This study investigated the compositional changes that occur during the target sintering process and the pulsed laser deposition of films. Using these data, a target composition can be prepared to produce Ca(1−x)NixO thin films with any desired lattice constant.

Type
Articles
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Pereira, P., Lee, S. H., Somorjai, G. A., and Heinemann, H., Catal. Lett. 6, 255 (1990).CrossRefGoogle Scholar
2Rasko, J., Pereira, P., Somorjai, G. A., and Heinemann, H., Catal. Lett. 9, 395 (1991).CrossRefGoogle Scholar
3Rasko, J., Somorjai, G. A., and Heinemann, H., Appl. Catal. A,General 84, 57 (1992).CrossRefGoogle Scholar
4Ginter, D. M., Magni, E., Somorjai, G. A., and Heinemann, H., Catal. Lett. 16, 197 (1992).CrossRefGoogle Scholar
5Cheung, J. T., Niizawa, G., Moyle, J., Ong, N. P., Paine, B. M., and Vreeland, T. Jr., J. Vac. Sci. Technol. A 4, 2086 (1986).CrossRefGoogle Scholar
6Baleva, M. I., Maksimov, M. H., Metev, S. M., and Sendova, M. S., J. Mater. Sci. Lett. 5, 533 (1986).CrossRefGoogle Scholar
7Dubowski, J. J., Norman, P., Sewell, P. B., Williams, D. F., Krolicki, F., and Lewicki, M., Thin Solid Films 147, L51 (1987).CrossRefGoogle Scholar
8Kwok, H. S., Zheng, J. P., Witanachchi, S., Mattocks, P., Shi, L., Ying, Q. Y., Wang, X. W., and Shaw, D. T., Appl. Phys. Lett. 52, 1095 (1988).CrossRefGoogle Scholar
9Sankar, H., in Laser-Controlled Chemical Processing of Surfaces, edited by Johnson, A. W., Ehrlich, D. J., and Schlossberg, H. R. (Elsevier Science Publishing, 29, New York, 1984), p. 373.Google Scholar
10Dijkkamp, D., Venkatesan, T., Wu, X. D., Shaheen, S. A., Jisrawi, N., Min-Lee, Y. H., McLean, W. L., and Croft, M., Appl. Phys. Lett. 51, 619 (1987).CrossRefGoogle Scholar
11Narayan, J., Biunno, N., Singh, R., Holland, O. W., and Auciello, O., Appl. Phys. 51, 1845 (1987).Google Scholar
12Fork, D. K., Boyce, J. B., Ponce, F. A., Johnson, R. I., Anderson, G. B., Connell, G. A. N, Eom, C. B., and Geballe, T. H., Appl. Phys. Lett. 53, 337 (1988).CrossRefGoogle Scholar
13Balooch, M., Olander, D. R., and Russo, R. E., Appl. Phys. Lett. 55, 197 (1989).CrossRefGoogle Scholar
14Mao, X. L., Russo, R. E., Liu, H. B., and Ho, J. C., Appl. Phys. Lett. 57, 2591 (1990).CrossRefGoogle Scholar
15Marquardt, C. L., Williams, R. T., and Nagel, D. J., in Plasma Synthesis and Etching of Electronic Materials, edited by Chang, R. P. H. and Abeles, B. (Mater. Res. Soc. Symp. Proc. 38, Pittsburgh, PA, 1985), p. 325.Google Scholar
16Wagal, S. S., Juengerman, E. M., and Collins, C. B., Appl. Phys. Lett. 53, 187 (1988).CrossRefGoogle Scholar
17Singh, R. K. and Narayan, J., Phys. Rev. B 41, 8843 (1990).CrossRefGoogle Scholar
18Kittel, C., in Introduction to Solid State Physics (John Wiley & Sons, Inc., New York, 1976), p. 84.Google Scholar
19Perez-Albuerne, E. A. and Drickamer, H. G., J. Chem. Phys. 43, 1381 (1965).CrossRefGoogle Scholar
20Clendenen, R. L. and Drikamer, H. G., J. Chem. Phys. 44, 4223 (1966).CrossRefGoogle Scholar
21Chan, W-T., Mao, X. L., and Russo, R. E., Appl. Spectrosc. 46, 1025 (1992).CrossRefGoogle Scholar