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Microstructure of epitaxial VO2 thin films deposited on (1120) sapphire by MOCVD

Published online by Cambridge University Press:  03 March 2011

H. Zhang ,
H.L.M. Chang ,
J. Guo  and
T.J. Zhang
H. Zhang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838
H.L.M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838
J. Guo
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838
T.J. Zhang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838
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Abstract

Epitaxial VO2 thin films grown on (1120) sapphire (α-Al2O3) substrates by MOCVD at 600 °C have been characterized by conventional electron microscopy and high resolution electron microscopy (HREM). Three different epitaxial relationships between the monoclinic VO2 films and sapphire substrates have been found at room temperature: I. (200) [010] monoclinic VO2 ‖ (1120) [0001] sapphire, II. (002) [010] monoclinic VO2 ‖ (1120) [0003] sapphire, and III. (020) [102] monoclinic VO2 ‖ (1120) [0001] sapphire. Expitaxial relationships II and III are equivalent to each other when the film possesses tetragonal structure at the deposition temperature; i.e., they can be described as (010) [100] tetragonal VO2 ‖ (1120) [0001] sapphire and (100) [010] tetragonal VO2 ‖ (1120) [0001] sapphire. HREM image shows that the initial nucleation of the film was dominated by the first orientation relationship, but the film then grew into the grains of the second and the third (equivalent to each other at the deposition temperature) epitaxial relationships. Successive 90°transformation rotational twins around the a-axis are commonly observed in the monoclinic films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 9 , September 1994 , pp. 2264 - 2271
Copyright
Copyright © Materials Research Society 1994

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