Journal of Materials Research


Heteroepitaxial growth of β'-SiC films on TiC substrates: Interface structures and defects

F.R. Chiena1, S.R. Nutta1 p1, J.M. Carulli Jr.a2, N. Buchana2, C.P. Beetz Jr.a2 and W.S. Yooa2

a1 Division of Engineering, Brown University, Providence, Rhode Island 02912

a2 Advanced Technology Materials, Inc., Danbury, Connecticut 06810


Thin epitaxial films of β-SiC were grown by CVD on (100), (111), and (112) TiC substrates. TEM observations of the resulting interfaces revealed that island nucleation prevailed in the early stages of deposition for all three substrate orientations. Films grown on (111) and (112) TiC were monocrystalline, while SiC films deposited on (100) substrates were polycrystalline and not epitaxial, a phenomenon attributed to the poor match of atomic positions in SiC and TiC on their respective (100) planes. The (111) interface was abrupt and atomically flat, while the (112) interface exhibited {111} facets and steps. Simulated images of the stable (111) interface were calculated based on several possible atomic configurations, and the atomic structure of the interface was deduced from comparisons between the simulated images and phase-contrast TEM images.

(Received November 17 1993)

(Accepted April 19 1994)


p1 Current address: Department of Materials Science, University of Southern California, Los Angeles, California 90089–0241.