a1 Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
a2 Department of Materials Engineering, Kyonggi University, Suwon 442-760, Korea
The microwave dielectric properties of (Zr0.8Sn0.2)TiO4 were investigated as a function of the amount of additives such as Nb2O5 Ta2O5 and Sb2O5 in the temperature range of 20 °C to 80 °C at 7 GHz. As the amount of additives increased up to 1.0 mol %, the unloaded Q increased due to the decrease of oxygen vacancies in the (Zr0.8Sn0.2)TiO4 lattice and then decreased with further addition of additives because the electron concentration was increased. The temperature coefficient of the resonant frequency turned more negative with increasing additives. Although the Nb+5, Ta+5, and Sb+5 ions have a similar ionic size and the same valence electronics, each resulted in different microwave dielectric properties.
(Received December 21 1994)
(Accepted April 10 1995)