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In situ imaging of μN load indents into GaAs

Published online by Cambridge University Press:  03 March 2011

E.T. Lilleodden ,
W. Bonin ,
J. Nelson ,
J.T. Wyrobek  and
W.W. Gerberich
E.T. Lilleodden
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
W. Bonin
Affiliation:
Hysitron, Inc., Minneapolis, Minnesota 55455
J. Nelson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
J.T. Wyrobek
Affiliation:
Hysitron, Inc., Minneapolis, Minnesota 55455
W.W. Gerberich
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

Nanomechanical devices constitute an important and growing field, as they allow for new understanding of the mechanical properties at interfaces and surfaces. As an example, a newly developed nanoindentation device has been used to accomplish μN load indents into GaAs. First, it is shown that a plastic zone can be measured and is comparable to theory. Also, it is shown that the rate of indentation affects both the depth and upset zone of low load indents, implying a strain-rate sensitivity effect at room temperature. This is reinforced by observation of what appears to be a glide-based relaxation process.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 9 , September 1995 , pp. 2162 - 2165
Copyright
Copyright © Materials Research Society 1995

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References

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