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Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

Published online by Cambridge University Press:  03 March 2011

L.M. Porter ,
R.F. Davis ,
J.S. Bow ,
M.J. Kim  and
R.W. Carpenter
L.M. Porter
Affiliation:
Department-of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
R.F. Davis
Affiliation:
Department-of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J.S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
M.J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
R.W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
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Abstract

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 1 , January 1995 , pp. 26 - 33
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Chou, T. C., Joshi, A., and Wadsworth, J., J. Mater. Res. 6, 796 (1991).CrossRefGoogle Scholar
2Chou, T. C., Joshi, A., and Wadsworth, J., J. Vac. Sci. Technol. A 9, 1525 (1991).CrossRefGoogle Scholar
3Nathan, M. and Ahearn, J. S., J. Appl. Phys. 70, 811 (1991).CrossRefGoogle Scholar
4Lundberg, N., Zetterling, C-M., and Ostling, M., Appl. Surf. Sci. 73, 316 (1993).CrossRefGoogle Scholar
5Lundberg, N. and Ostling, M., Appl. Phys. Lett. 63, 3069 (1993).CrossRefGoogle Scholar
6Kelner, G., Binari, S., Shur, M., and Palmour, J. W., Electron. Lett. 27, 1038 (1991).CrossRefGoogle Scholar
7Porter, L. M., Bow, J. S., Glass, R. C., Kim, M. J., Carpenter, R. W., and Davis, R. F., (March 1995, in press). J. Mater. Res.Google Scholar
8Merkle, K. L., Buckett, M. I., and Gao, Y., Acta Metall. Mater. 40, S249 (1992).CrossRefGoogle Scholar
9Xiao, S. Q., Heuer, A. H., and Pirouz, P., in Proc. 50th MSA Annual Meeting (San Francisco Press, 1992).Google Scholar
10Wissman, B. D., Gidley, D. W., and Frieze, W. E., Phys. Rev. B 46, 16058 (1992).CrossRefGoogle Scholar
11Pirri, C., Peruchetti, J. C., Gewinner, G., and Derrien, J., Surf. Sci. 152–153 (2), 1106 (1985).CrossRefGoogle Scholar
12JANEF Thermochemical Tables, J. Physical and Chemical Reference Data, edited by Chase, M. W. Jr., Davies, C. A., Downey, J.R. Jr, Frurip, D. J., McDonald, R. A., and Syverud, N. A. (The American Chemical Society and The National Institute of Physics for the National Bureau of Standards, Midland, MI, 1985), Vol. 14.Google Scholar
13Auger and X-ray Photoelectron Spectroscopy, edited by Briggs, D. and Seah, M.P., 2nd ed., Practical Surface Analysis (John Wiley & Sons, New York, 1990), Vol. 1.Google Scholar
14Binary Alloy Phase Diagrams, edited by Massalski, T. B., Okamoto, H., Subramanian, P. R., and Kacprzak, L., 2nd ed. (ASM INTERNATIONAL, Materials Park, OH, 1990), Vol. 2.Google Scholar