Editors : Y. Hamakawa, T. D. Moustakas, J. I. Pankove
a1 University of California, Department of Electrical Engineering, Berkeley, CA 94720
a2 Lawrence Berkeley Laboratory, Berkeley, CA 94720
Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550–600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.