MRS Proceedings


Multilayer AlxGa1−xAs Heterostructures for Second-Harmonic Generation

1992 MRS Fall Meeting.

S. Janza1, F. Chatenouda1, H. Daia1, E. Vilksa1, M. Buchanana1, R. Normandina1 and A. J. Springthorpea2

a1 Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.

a2 Bell-Northern Research, P.O. Box 3511, Station C, Ottawa, Canada, KlY 4H7.


Quasi-phase matching in AlxGa1−xAs heterostructure optical waveguides can be used for efficient second-harmonic (SH) generation. The efficiency of these devices depends on the linear and nonlinear optical properties of the component materials. We present measurements of the SH susceptibility variation in AlxGa1−xAs with Al concentration, for fundamental light at λ = 1.06 μ. The measured SH susceptibility decreases by an order of magnitude as the Al concentration is varied from x = 0 to x = 0.97. These measurements are used to evaluate the SH generation efficiency of AlxGa1−xAs heterostructures as the structural and material parameters are varied.