Editors : Derek C. Houghton, Charles W. Tu, Raymond T. Tung
a1 Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
a2 Bell-Northern Research, P.O. Box 3511, Station C, Ottawa, Canada, KlY 4H7.
Quasi-phase matching in AlxGa1−xAs heterostructure optical waveguides can be used for efficient second-harmonic (SH) generation. The efficiency of these devices depends on the linear and nonlinear optical properties of the component materials. We present measurements of the SH susceptibility variation in AlxGa1−xAs with Al concentration, for fundamental light at λ = 1.06 μ. The measured SH susceptibility decreases by an order of magnitude as the Al concentration is varied from x = 0 to x = 0.97. These measurements are used to evaluate the SH generation efficiency of AlxGa1−xAs heterostructures as the structural and material parameters are varied.