MRS Proceedings


Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering

1991 MRS Fall Meeting.

Hong Koo Kima1 and Michelle Mathura1

a1 Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, PA 15261


Sputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-target distance, and gas composition/pressure were optimized to obtain highly c-axis oriented and highly resistive films. Deposited films were characterized by X-ray diffraction, scanning electron microscopy, capacitance, resistivity, and breakdown field strength measurements. X-ray diffraction measurements show a strong (0002)-plane peak with a full-width-half-maximum of less than 1°, indicating that the ZnO films deposited on GaAs substrates are highly c-axis oriented. DC resistivities of the films were measured to be on the order of 1011 Ω-cm.