Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T05:22:19.927Z Has data issue: false hasContentIssue false
  • English
  • Français

An Interface-Sensitive Conversion Electron Mössbauer Spectroscopic Study of the Ion Beam Induced Reactions at Fe-Si Interface.

Published online by Cambridge University Press:  22 February 2011

V.P. Godbole ,
V.G. Bhide ,
S.V. Ghaisas ,
S.M. Kanetkar ,
R.S. Joshee  and
S.B. Ogale
V.P. Godbole
Affiliation:
Department of Physics, University of Poona, PUNE-411 007, India.
V.G. Bhide
Affiliation:
Department of Physics, University of Poona, PUNE-411 007, India.
S.V. Ghaisas
Affiliation:
Department of Physics, University of Poona, PUNE-411 007, India.
S.M. Kanetkar
Affiliation:
Department of Physics, University of Poona, PUNE-411 007, India.
R.S. Joshee
Affiliation:
Department of Physics, University of Poona, PUNE-411 007, India.
S.B. Ogale
Affiliation:
Department of Physics, University of Poona, PUNE-411 007, India.
Get access

Abstract

The ion beam induced reactions at Fe-Si interface are studied for the first time using a novel interface-sensitive Mössbauer probe.The samples used in these studies are prepared by depositing a thin layer (<450A°) of enriched Fe57 isotope (95.45% by composition) on a freshly cleaned silicon (111) substrate followed by a deposition of a 150Ao film of natural iron (Fe 57 only 2.2%).These samples are subjected to Xetion bombardment at an incident ion energy of 100 keV and a dose of 6 × 1015 ions/cm2 The technique of Conversion Electron Mössbauer Spectroscopy (CEMS) is used to characterize the formation and growth of different phases as a function of annealing treatment. The spectra are leastsquare fitted using the MOSFIT programme.The MHssbauer lines for as-deposited and ion bombarded samples show a considerable broadening, which is a clear signature of a large concentration of defects formed at the interface due to ion beam induced collision cascades. As the samples are annealed the resonance lines are sharpened indicating recovery of stoichiometrically well-defined phases from an initial defective state. The present study indicates formation of FeSi and Fe3 Si phases after the annealing treatment-RBS measurements are used to confirm the mixing.These results are analyzed in terms of the non-equilibrium features of the directed energy processing of interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 241
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mayer, J.W., Erikson, L. and Davies, J.A., Ion implantation in semiconductors,(Academic Press, New York, London, (1970)).Google Scholar
2. Stritzker, B., White, C.V. and Appleton, B., Nucl.Instru.and Methods,(182/183), 97 (1981).Google Scholar
3. Liu, B.X., Johnson, W.L. and Nicolet, M.A., Lau, S.S., Appl.Phys.Lett. 42 (1).45 (1983).CrossRefGoogle Scholar
4. Godbole, V.P., Ohide, V.G., Ghaisas, S.V., Murthy, A., Kulkarni, S.K. and Ogale, S.B., Nuci.Instru.and Methods, (209/210), 131 (1983).Google Scholar
5. Stearns, M.B., Phys.Rev. 129, 1136 (1963).Google Scholar
6. Stearns, M.B., Phys.Rev. 168, 588 (1968).Google Scholar
7. Marchal, G., Mangin, Ph. and Janot, Chr., Solid State Commu. 18, 739 (1976).Google Scholar
8. Oswald, R. and Ohring, M., J.Vac.Sci.Technol., 13, 40 (1976).CrossRefGoogle Scholar
9. Oswald, R.S., Ron, M. and Ohring, M., Solid State Commun. 26, 883 (1978).CrossRefGoogle Scholar
10. Sawicki, J., Sawicka, B. Stanek, J. and Kowalski, J., Phys.Stat.Sol. (4) 77, KI (1976).Google Scholar