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Stebic Revisited

Published online by Cambridge University Press:  21 February 2011

Paul D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
Colin J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
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Abstract

We re-examine the technique of Scanning Transmission Electron Beam Induced Conductivity and report on the acquisition of remote contact EBIC images at 200keV showing variations in electrical activity within P-doped CdTe.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1 Wilson, P.R., Ultramicroscopy 31 177 (1989)Google Scholar
2 Lavel, J.Y., Pinet-Berger, M.H. and Cabanel, C., J. de Phys. Colloque C5 521 (1988)Google Scholar
3 Bubulac, L.O. and Tennant, W.E., Appl. Phys. Lett 52 1255 (1988)Google Scholar
4 Panin, G.N. and Yakimov, EB., Inst. Phys. Conf. Ser. No. 177 763 (1991); Panin, G.N. and Yakimov, EB., J. de Phys Ç6 181 (1991)Google Scholar
5 Russell, G.J., Robertson, M.J., Vincent, B. and Woods, J., J. Mat. Sei. 15 939 (1980)Google Scholar
6 Leamy, HJ., J. Appl. Phys. 53 R51 (1982)Google Scholar
7 2nd and 3rd International workshops on beam injection assessment of defects in semiconductors, in J. de Phys. Vol.1 Colloque No 6 Suppl JPIII No 12 (1991) and Mat. Sei. Eng. B24 (1994) respectively.Google Scholar
8 Sparrow, T.G. and Valdré, U., Phil. Mag. 36 1517 (1977)Google Scholar
9 Fathy, D., Sparrow, T.G. and Valdré, U., J. Microsc. 118 263 (1979)Google Scholar
10 Fathy, D. and Valdré, U., J. Microsc. Spectrosc. 5 175 (1980)Google Scholar
11 Petroff, P.M., Lang, D.V., Strudel, J.L. and Logan, R.A., Scanning Electron Microscopy 1 325 (1978)Google Scholar
12 Petroff, P.M., Logan, R.A. and Savage, A., Phys. Rev. Lett. 44 287 (1980)Google Scholar
13 Pennycook, S.J., Ultramicroscopy 7 99 (1981)Google Scholar
14 Ourmazd, A. and Booker, G.R, phys stat sol (a) 55 771 (1979); /A. Ourmazd, Cryst. Res. Technol. 16 137(1981)Google Scholar
15 Perreault, G.C., Hyland, S.L. and Ast, D.G., Solar Energy Materials and Solar Cells 30 309 (1993)Google Scholar
16 Hyland, S., Perrault, G., Wohlgemuth, J. and Ast, D.G., J. Crystal Growth 104 175 (1990)Google Scholar
17 Perreault, G.C. and Ast, D.G., J. Phys. E Sei. Instrum. 21 1175 (1988)Google Scholar
18 Cabanel, C. and Lavel, J.Y., J. Appl. Phys. 67 1425 (1990)Google Scholar
20 Donolato, C., Inst Phys Conf Ser. No. 60 215 (1981); Donolato, C., phys. stat sol. (a) 65.649 (1981)Google Scholar
21 Alnajarr, A.A., Watson, C.C.R., Brinkman, A.W. and Duróse, K., J. Crystal Growth 117 385 (1992)Google Scholar
22 Loginov, Y.Y., Brown, P.D., Thompson, N., Alnajjar, A.A., Brinkman, A.W. and Woods, J., J. Crystal Growth 117 259 (1991)Google Scholar
23 Donolato, C., J. Phys. D 101 781 (1977)Google Scholar
24 Palm, J. and Alexander, H., J. de Phys. C6 101 (1991)Google Scholar
25 Benabbas, T. and Lavel, J.Y., J. de Phys. C6 231 (1991)Google Scholar