Journal of Materials Research


Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

L.V. Sarafa1 c1, M.H. Engelharda1, C.M. Wanga1, A.S. Leaa1, D.E. McCreadya1, V. Shutthanandana1, D.R. Baera1 and S.A. Chambersa1

a1 Pacific Northwest National Laboratory, Richland, Washington 99352


Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)2] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.

(Received October 27 2006)

(Accepted December 20 2006)

Key Words:

  • C;
  • Chemical vapor deposition (CVD);
  • X-ray photoelectron spectroscopy (XPS)


c1 Address all correspondence to this author. e-mail: