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Junction contact materials and interfaces in Si channel devices

Published online by Cambridge University Press:  18 February 2011

Wei-Yip Loh  and
Brian Coss
Wei-Yip Loh
Affiliation:
Sematech, Austin, TX, USA; wei-yip.loh@sematech.org
Brian Coss
Affiliation:
Sematech, Austin, TX, USA; brian.coss@student.utdallas.edu
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Abstract

Effective schemes to address contact resistance between silicide and a highly doped diffused junction are examined. Some of the techniques introduced include (1) metal work function tuning, (2) interfacial dipole engineering, and (3) phase modulation of the nickel silicide. These techniques allow modulation of the Schottky barrier of NiSi to n-Si to less than 0.3 eV, which is crucial to achieve sub 10−8 Ω cm2 contact resistivity for the sub-32 nm technology node.

Type
Research Article
Information
MRS Bulletin , Volume 36 , Issue 2: Contact materials for nanoelectronics , February 2011 , pp. 97 - 100
Copyright
Copyright © Materials Research Society 2011

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