Editors : S.B. Desu, R. Ramesh, T. Shiosaki, B.A. Tuttle
a1 Institute of Physics, Rostov State University, 194 StachKi ave., Rostov-on-Don, 344104 Russia
In the present paper three mechanisms of self-polarization of ferroelectric crystals are discussed: polarization by the crystal bending, that by the “organized” Phase transition and that by the internal field. It is shown that these mechanisms operate also in the case of films. However, the using of cathode sputtering leads to the appearance of two new mechanisms: polarization by the field biasing the substrate with respect to the gas discharge at the film deposition temperature Ts below the Curie point temperature Tc (Ts < TO; and polarization by the field captured by the traps of the negative charge having no time to relax for the time of cooling the film to Tc (Ts > Tc).