Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T06:03:59.229Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Centers Influence On Photoresponse Characteristics In High-Resistivity ZnSe

Published online by Cambridge University Press:  15 February 2011

V.A. Korotkov ,
L.I. Bruk ,
A.V. Simashkevich ,
O.S. Gorea ,
L.E. Kovalev  and
L.V. Malikova
V.A. Korotkov
Affiliation:
State University of Moldova, Dept. of Physics, Kishinev, MOLDOVA, MD2009
L.I. Bruk
Affiliation:
State University of Moldova, Dept. of Physics, Kishinev, MOLDOVA, MD2009
A.V. Simashkevich
Affiliation:
State University of Moldova, Dept. of Physics, Kishinev, MOLDOVA, MD2009
O.S. Gorea
Affiliation:
State University of Moldova, Dept. of Physics, Kishinev, MOLDOVA, MD2009
L.E. Kovalev
Affiliation:
State University of Moldova, Dept. of Physics, Kishinev, MOLDOVA, MD2009
L.V. Malikova
Affiliation:
Brooklyn College, Dept. of Physics, Brooklyn, NY, USA, lmakova@its.brooklyn.cuny.edu
Get access

Abstract

The photocurrent peak after preliminary optical excitation with specific wavelength in high resistivity (ρ≍1012 Ω∗cm), unintentionally doped ZnSe monocrystals was observed. To study photocurrent “flash” phenomenon, the photocurrent relaxation spectra, photon-capture crosssection (PCCS) spectra and photo-electron paramagnetic resonance (photo-EPR) were investigated. Two-levels model involving the recombination of an S-center and an acceptor A has been developed to obtain the relation between recombination probability and instantaneous photocurrent value. The S-centers ionization energies (1.06eV and 1.14eV from the bottom of the conduction band) and charge carriers life times were determined. The acceptor's positions in ZnSe band gap are equal to 2.05, 2.11, 2.16 and 2.21eV from the bottom of the conduction band. The photocurrent and PCCS “flash” nature as well as complicated photo-EPR are associated with the relaxation of S-centers attributed to Fe ion in the band gap of semi-insulated ZnSe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 579
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Haase, M.A., Qiu, J., DePuydt, J.M., Luo, H. et al., Appl. Phys.Lett., 59, 1273 (1991).Google Scholar
2. Ishibashi, A. and Mori, Y., J.Cryst.Growth, 138, 677 (1994).Google Scholar
3. Berkovskii, F.M. and Ryvkin, S.M., Sov.Phys.Solid.St., 5, 381 (1963).Google Scholar
4. Gorea, O.S., Kovalev, L.E., Korotkov, V.A., Malicova, L.V. and Simashkevich, A.V., Sov.Phys.Semicond., 23, 1294 (1989).Google Scholar
5. Arkadieva, E.N., Paritskii, L.G. and Ryvkin, S.M., Sov.Phys.Solid St., 2, 1051(1960)Google Scholar
6. Ryvkin, S.M., Photoelectric Effects in semiconductors, Consultants Bureau, New York (1964).Google Scholar
7. Grimmeisec, H.G. and Ledebo, L.A., J.Appl.Phys., 46, 2155(1975)Google Scholar
8. Davless, S.S. et al., J. Luminescence, 18–19,322(1970)Google Scholar