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A Novel Method For Studying Degradation Related To Plasma Processing Of Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

J. Lagowski ,
A. Hofl ,
L. Jastrzebski ,
P. Edelman  and
T. Esry
J. Lagowski
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 East Fowler Avenue, ENB 118, Tampa, FL 33620
A. Hofl
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 East Fowler Avenue, ENB 118, Tampa, FL 33620
L. Jastrzebski
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 East Fowler Avenue, ENB 118, Tampa, FL 33620
P. Edelman
Affiliation:
Semiconductor Diagnostics, Inc, 6604 Harney Road, Suite F, Tampa, FL 33610M
T. Esry
Affiliation:
Lucent Technologies, Inc., 9333 South John Young Parkway, Orlando, FL 32819
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Abstract

A new generation of monitoring tools based on oxide potential and surface photovoltage measurements offers real-time, non-contact diagnostics of plasma damage, especially dielectric charge build-up, radiation damage, and heavy metal contamination. The approach relies on reusable, 10 00Åoxide monitor wafers rather than test structures. The technique generates whole wafer maps powerful for correlating plasma damage with plasma equipment characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 437
Copyright
Copyright © Materials Research Society 1996

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References

[1] Fang, S. and McVittie, J. P., IEEE Elec/ron Device Left., 13, 288–290 (1992).Google Scholar
[2] Murakawa, M.M., Fang, S., McVittie, J.P., Proc. IEDM, Dec. 92, 57–60. IEEE.Google Scholar
[3] Nauka, K., Lagowski, J., Edelman, P., Presented at and published in the proceedings of DRIP VI 1995. Estes Park, CO. December 3–6, 1995.Google Scholar
[4] Jastrzebski, L. et al. , Proc. of the 40th Anmal TechnicalMeetmg, Inst. of Environ. Sciences, Chicago, IL., May 1994, 316–324 (1994).Google Scholar
[5] Shin, H. et al. , IEEEElectron Device Lett., 14, 88–90 (1993).Google Scholar
[6] Stamper, A.K., Lasky, J. B., and Adkisson, J. W., J. Vac. Sci. Technol. A, 13, 905–911 (1995).Google Scholar
[7] For a review of the new approach, see: HotT, A.M., Esry, T.C., Nauka, K.; “New Plasma Damage Monitoring - A No-Test Structure, Real-Time Approach”, Solid State Electronics, 1996, in press.Google Scholar
[8] Nauka, K., Int. Symposium on Semicond. Characterization, Nat. Inst. Stand. Tech. NIST, January 1995.Google Scholar
[9] Nauka, K. et al. , 3rd Internat. Workshop on Adv. Plasma Tools and Proc., AVS Publ. (1995).Google Scholar
[10] Shin, H., et al. , Solid State.Technol., 36, No. 8, 29–36, (1993).Google Scholar