Hostname: page-component-7c8c6479df-ph5wq Total loading time: 0 Render date: 2024-03-18T01:54:36.472Z Has data issue: false hasContentIssue false

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Published online by Cambridge University Press:  11 February 2011

P. Victor
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore 560012, India
S. Bhattacharyya
Affiliation:
Max-Planck-Institut fur Mikrostrukturphysik, Halle, Germany
S. Saha
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL-60439, USA
S. B. Krupanidhi
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore 560012, India
Get access

Abstract

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ramesh, R., Inam, A., Chan, W. K., Wilkens, B., Myers, K., Remschnig, K., Hart, D. L., and Tarascon, J. M., Science 252, 944 (1991).Google Scholar
[2] Bursill, L. A., Reaney, I. M., Vijay, D. P., and Desu, S. B., J. Appl. Phys. 75, 1521 (1994).Google Scholar
[3] park, Byung-eun and Ishiwara, H., Integrated Ferroelectrics, 40(1–5) (2001) 201 Google Scholar
[4] Alexe, Marin. Appl. Phys. Lett. 72, 2283. (1998)Google Scholar
[5] Senzaki, Junji, Kurihara, Koji, Nomura, Naoki, Mitsunaga, Osamu, Iwasaki, Yoshitaka and Ueno, Tomo, Jpn. J. Appl. Phys. 37 (1998) 5171.Google Scholar
[6] Kijika, Takeshi, Satoh, Sakiko, Matsunaga, Hironori and Koba, Masatoshi, Jpn. J. Appl. Phys. 35 (1995) 1246.Google Scholar
[7] Wu, Di, Huang, Su, Shao, Qiyue, Li, Aidong and Ming, Naiben, Phys. Stat. Sol.(A) 193(1) (2002) R4–R6.Google Scholar
[8] Victor, P., Bharadwaja, S.S.N., Nagaraju, J. and Krupanidhi, S.B., Solid state. Comm. 120(9–10) (2001) 379.Google Scholar
[9] Bhattacharyya, Sudipta, “Aurivillus type Bismuth layered perovskite thin films”, Ph.D thesis, Indian Institute of Science, Bangalore, India, 2001 Google Scholar
[10] Nicollian, E.H. and Brews, J.R., “MOS (Metal Oxide Semiconductor ) Physics and Technology”, (Wiley, New York, 1982).Google Scholar
[11] Ito, K. and Tsuchiya, H., Solid State Electronics, 20 (1977) 529 Google Scholar
[12] Choi, Jae-Hoon, Kim, J.W., and Oh, Tae-Sung, Mat. Res. Soc. Symp. Proc 666 (2001)Google Scholar
[13] Miller, S. L. and McWhorter, P. J., J. Appl. Phys. 72, 5999 (1992).Google Scholar
[14] Frenkel, J. Tech. Phys., USSR (1938) V685.Google Scholar