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Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

Published online by Cambridge University Press:  10 February 2011

L.J. Lauhon ,
S. A. Ustin  and
W. Ho
L.J. Lauhon
Affiliation:
Department of Physics, Cornell University, Ithaca, N.Y., 14853
S. A. Ustin
Affiliation:
Department of Physics, Cornell University, Ithaca, N.Y., 14853
W. Ho
Affiliation:
Department of Physics, Cornell University, Ithaca, N.Y., 14853
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Abstract

AlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 277
Copyright
Copyright © Materials Research Society 1997

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References

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