Editors : S. Cristoloveanu, R.A.B. Devine, Y. Homma, J. Kanicki, M. Matsumura
a1 K Systems Corp., Dayton OH 45432, firstname.lastname@example.org
a2 U.S. Air Force, WL/POOC, Wright‐Patterson Air Force Base OH 45433, carrsj @ wl.wpafb.af.mil
BaTiO3 films prepared by RF sputtering was studied for capacitor applications. Some films produced have a capacitance storage of 0.85 μF/cm2, a high resistivity of 1014 ω‐cm, and a low dissipation factor of 0.005. The dielectric constant of these BaTi03 films were approximately 10 to 30, which is superior to that of the typical polymer film capacitor and had little dependence on frequency. However the breakdown strength of BaTi03 was approximately 5MV/meter. The theoretical breakdown strength of BaTi03 is reported to be as high as 200MV/m. The processing parameters of BaTi03 films must be optimized to obtain the potential benefit of the BaTi03.