MRS Proceedings
- MRS Proceedings / Volume 446 / 1996
- Copyright © Materials Research Society 1997
- DOI: http://dx.doi.org/10.1557/PROC-446-343 (About DOI)
Table of Contents - Volume 446 - Amorphous and Crystalline Insulating Thin Films–1996
Editors : S. Cristoloveanu, R.A.B. Devine, Y. Homma, J. Kanicki, M. Matsumura
Articles
Sputtered Barium Titanate Films for Capacitor Applications
1996 MRS Fall Meeting.
Bang Hung Tsaoa1, Sandra Fries Carra2 and Joseph A. Weimera2
a1 K Systems Corp., Dayton OH 45432, tsaobh@wl.wpafb.af.mil
a2 U.S. Air Force, WL/POOC, Wright‐Patterson Air Force Base OH 45433, carrsj @ wl.wpafb.af.mil
Abstract
BaTiO3 films prepared by RF sputtering was studied for capacitor applications. Some films produced have a capacitance storage of 0.85 μF/cm2, a high resistivity of 1014 ω‐cm, and a low dissipation factor of 0.005. The dielectric constant of these BaTi03 films were approximately 10 to 30, which is superior to that of the typical polymer film capacitor and had little dependence on frequency. However the breakdown strength of BaTi03 was approximately 5MV/meter. The theoretical breakdown strength of BaTi03 is reported to be as high as 200MV/m. The processing parameters of BaTi03 films must be optimized to obtain the potential benefit of the BaTi03.
