Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T13:52:30.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Cross Sectional AFM of Oxidized Porous Silicon

Published online by Cambridge University Press:  10 February 2011

Weijun Ye ,
Jordan Poler ,
B. Drozd  and
M. A. Hasan
Weijun Ye
Affiliation:
Department of Chemistry, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
Jordan Poler
Affiliation:
Department of Chemistry, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
B. Drozd
Affiliation:
Department of Electrical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
M. A. Hasan
Affiliation:
Department of Electrical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
Get access

Abstract

Morphological studies of bulk porous-silicon (PS) are presented. Using the atomic force microscope, cleaved cross-sections of electrochemically processed porous-silicon were investigated. The porous-silicon/silicon interface was examined. Using a room temperature UV O3 generator, the porous silicon-samples were oxidized. Oxidation in air was also observed. The morphology of the oxidized porous-silicon is process dependent. AFM contrast was enhanced by selective wet chemical etching. Unusually fast oxide etching in BOE was observed. A possible oxide/PS model is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 63
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Oren, R. and Ghandhi, S. K., J. Appl. Phys. 42, 752 (1971).Google Scholar
2. Young, E. M. and Tiller, W. A., App. Phys. Lett., 50, 46 (1987).Google Scholar
3. Schafer, S. A. and Lyon, S. A., J. Vac. Sci. Technol. A, 21, 422 (1982)Google Scholar
4. Chao, S. C., Pitchai, R., and Lee, Y. H., J. Electrochem. Soc. 136, 2751 (1989).Google Scholar
5. Kazor, A., Gwillam, R., Boyd, I. W., Appl. phys. Lett., 65, 412 (1994).Google Scholar
6. Boyd, I. W., Crachin, V., and Kazor, A., Jpn. J. Appl. Phys. 32, 6141 (1993).Google Scholar
7. Zhang, X.-J., Xue, G., Agarwal, A., Tsu, R., Hasan, M.-A., Greene, J. E., and Rockett, A., J. Vac. Sci. Technol. A, 11, 2553 (1993).Google Scholar
8. Noël, J.-P., Greene, J.E., Rowell, N. L., Kechang, S., and Houghton, D.C., Appl. Phys. Lett. 55, 1525 (1989)Google Scholar
9. Thompson, H., Yamani, Z., AbuHassan, L. H., Greene, J.-E., Nayfeh, M., and Hasan, M.-A., J. Appl. Phys. In press.Google Scholar
10. McClintock, J. A., Wilson, R. A. and Byer, N. E.., J. Vac. Sci. Technol. B 7, 129 (1989).Google Scholar