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LCVD of CNx Layers from NH3,/CCI4. Mixture using CuBr Vapor Laser

Published online by Cambridge University Press:  10 February 2011

B. Ivanov ,
C. Popov ,
D. Dimitrov ,
Y Shanov ,
L. Zambov ,
M. Georgiev  and
G. Peev
B. Ivanov
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
C. Popov
Affiliation:
Central Laboratory of Photoprocesses “Academician Jordan Malinowski”, Bulgarian Academy of Sciences, Acad. Georgi Bontchev St., Bl. 109, 1113 Sofia, Bulgaria
D. Dimitrov
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tsarigradsko Chaussee 72, 1784 Sofia, Bulgaria
Y Shanov
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
L. Zambov
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
M. Georgiev
Affiliation:
Dept. of Inorganic Chemistry, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
G. Peev
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
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Abstract

Amorphous CNx films were obtained on monocrystalline silicon substrates by direct writing laser induced chemical vapor deposition from CCI4 and NH3 using CuBr vapor laser. The main process parameters (scanning speed, laser power, background temperature) were varied in wide ranges. The deposition rates in the laser spot were in the range of 1 – 10 μm/s. Scanning electron microscopy showed that the layers had rather rough surface. The deposited films were composed of carbon, nitrogen, silicon and oxygen, as detected by AES and EDX analyses. Chemical bonding structure was investigated by FTIR and showed absorption bands corresponding to different chemical groups - CH, CH2, CH3, C=C, C=N, C=O, Si-O, Si-C, Si-N and C-N. The electrical measurements of the deposited films showed that their resistivity varied from 0.15 to 1.40 MΩ.cm and it was very sensitive to the deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 271
Copyright
Copyright © Materials Research Society 1998

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References

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