Hostname: page-component-7c8c6479df-995ml Total loading time: 0 Render date: 2024-03-29T13:54:55.226Z Has data issue: false hasContentIssue false

Effects of Chromium Ion Implantation on the Magneto-Transport Properties of La0.7Ca0.3MnO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

P. S. I. P. N. De Silva
Affiliation:
Blackett Laboratory, Imperial College, Prince Consort Rd, London, SW7 2BZ, UK.
N. Malde
Affiliation:
Blackett Laboratory, Imperial College, Prince Consort Rd, London, SW7 2BZ, UK.
A. K. M. A. Hossain
Affiliation:
Blackett Laboratory, Imperial College, Prince Consort Rd, London, SW7 2BZ, UK.
L. F. Cohen
Affiliation:
Blackett Laboratory, Imperial College, Prince Consort Rd, London, SW7 2BZ, UK.
K. A. Thomas
Affiliation:
Materials Department, Imperial College, Prince Consort Rd, London, SW7 2BP, UK.
R. Chater
Affiliation:
Materials Department, Imperial College, Prince Consort Rd, London, SW7 2BP, UK.
J. D. Macmanus-Driscoll
Affiliation:
Materials Department, Imperial College, Prince Consort Rd, London, SW7 2BP, UK.
T. J. Tate
Affiliation:
Depatment of Electrical Engineering, Imperial College, Prince Consort Rd, London, SW7 2BT, UK.
N. D. Mathur
Affiliation:
Materials Department, University of Cambridge, CB2 3QZ, UK.
M. G. Blamire
Affiliation:
Materials Department, University of Cambridge, CB2 3QZ, UK.
J. E. Evetts
Affiliation:
Materials Department, University of Cambridge, CB2 3QZ, UK.
Get access

Abstract

Thin films of colossal magnetoresistance material La0.7Ca0.3MnO3 were implanted with different fluence 200keV Cr ions. Resistivity measurements in zero and applied fields of up to 8T were made in order to determine the effects of the implanted magnetic ions on the magnetoresistance (MR). As the Cr fluence was increased, the resistivity increased and the metal-insulator transition (MI) temperature was suppressed to values below the experimentally accessible temperature range as a result of oxygen loss and the creation of defects. However, for the highest fluence of 5×1015 ions/cm2, a re-entrant metal-insulator type transition was observed. Furthermore a significant improvement in the low field MR was observed for fields less than 500mT. These results are interpreted in terms of substitution of Cr ions onto Mn sites and the creation of a magnetically inhomogeneous material and the influence of oxygen deficiency.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kusters, R. M., Singleton, J., Keen, D. A., McGreery, R. and Hayes, W., Physica B 155, 362 (1989).Google Scholar
2 Ju, H. L., Gopalakrishnan, J., Peng, J. L., Li, Q., Xiong, G. C., Venkatesan, T. and Greene, R. L., Phys. Rev. B 51, R6143 (1995).Google Scholar
3 Gupta, A., Gong, G. Q., Xiao, G., Duncombe, P. R., Lecoeur, P., Trouilloud, P., Wang, Y. Y., Dravid, V. P. and Sun, J. Z., Phys. Rev. B 54, R15629 (1996).Google Scholar
4 Snyder, G. J., Beasley, M. R., Geballe, T. H., Hiskes, R. and DiCarolis, S., Appl. Phys. Lett. 69, 4254 (1996).Google Scholar
5 Mathur, N. D., Burnell, G., Isaac, S. P., Jackson, T. J., Teo, B. -S., MacManus-Driscoll, J. L., Cohen, L. F., Evetts, J. and Blamire, M. G., Nature 387, 266 (1997).Google Scholar
6 Steenbeek, K., Eick, T., Kirsch, K., O'Donnell, K. and Steinbeiβ, E., Appl. Phys. Lett. 71, 968 (1997).Google Scholar
7 O'Donnell, J., Onellion, M., Rzchowski, M. S., Eckstein, J. N. and Bozovic, I., Phys. Rev. B 55, 5873 (1997).Google Scholar
8 Blamire, M. G., Mathur, N. D., Isaac, S. P., Teo, B. -S., Burnell, G. and Evetts, J. E., preprint.Google Scholar
9 Chen, C. -H., Talyansky, V., Kwon, C., Rajeswari, M., Sharma, R. P., Ramesh, R., Venkatesan, T., Melngailis, J., Zhang, Z. and Chu, W. K., Appl. Phys. Lett. 69, 3089 (1996).Google Scholar
10 Thomas, K. A., de Silva, P. S. I. P. N., Cohen, L. F., Hossain, A. K. H. A., Rajeswari, M., Venkatesan, T., Hiskes, R. and MacManus-Driscoll, J. L., submitted to J. Mater. Res.Google Scholar
11 Ziegler, J. and Biersack, P., The Stopping and Range of Ions in Solids (Pergammon, New York, 1985).Google Scholar
12 Jonker, G. H., Physica XXII 707 (1956).Google Scholar
13 Gundakaram, R., Arulraj, A., Vanitha, P. V., Rao, C. N., Gayathri, N., Raychaudhuri, A. K. and Cheetham, A. K., J. Solid State Chem. 127, 354 (1996).Google Scholar
14 Raveau, B., Maignan, A. and mMartin, C., J. Solid State Chem. 130, 162 (1997).Google Scholar
15 de Silva, P. S. I. P. N., Richards, F. M., Cohen, L. F., Alonso, J. A., Martínez-Lope, M. J., Casais, M. T., Thomas, K. A. and MacManus-Driscoll, J. L., submitted to J. Appl. Phys.Google Scholar
16 Guo, Z., Zhang, J., Zhang, N., Ding, W., Huang, H. and Du, Y., Appl. Phys. Lett. 70, 1897 (1997).Google Scholar
17 Jin, S., O'Brien, H. M., Tiefel, T. H., McCormack, M. and Rhodes, W. W., Appl. Phys. Lett. 66, 382 (1995).Google Scholar
18 Washburn, N. R., Stacey, A. M. and Portis, A. M., Appl. Phys. Lett. 70, 1622 (1997).Google Scholar
19 Mahendiran, R., Mahesh, R., Raychaudhuri, A. K. and Rao, C. N. R., Solid State Comm. 99, 149 (1996).Google Scholar
20 Malde, N., de Silva, P. S. I. P. N., Hossain, A. K. M. A., Cohen, L. F., Thomas, K. A., MacManus-Driscoll, J. L., Mathur, N. D. and Blamire, M. G., in press Solid. State Comm.Google Scholar
21 Malde, N., to be published.Google Scholar